FQP44N10 Datasheet and Replacement
Type Designator: FQP44N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 146 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 43.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO220
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FQP44N10 Datasheet (PDF)
fqp44n10.pdf

December 2000TMQFETQFETQFETQFETFQP44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is es
fqp44n10f.pdf

December 2000TMQFETQFETQFETQFETFQP44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is es
fqp44n08.pdf

August 2000TMQFETQFETQFETQFETFQP44N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 44A, 80V, RDS(on) = 0.034 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been es
Datasheet: FCPF11N60 , FQP3N30 , FQP3N60C , FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , MMD60R360PRH , FQB11N40C , FQP45N15V2 , FQP46N15 , FQP47P06 , FQP4N80 , IRFU220B , FQP4N90C , FQP4P40 .
History: KMB8D0P30Q | SFB052N100C2 | TSM4424CS | MTN13N50FP | LKK47-06C5 | SM2F04NSU | BRCS200P03DP
Keywords - FQP44N10 MOSFET datasheet
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History: KMB8D0P30Q | SFB052N100C2 | TSM4424CS | MTN13N50FP | LKK47-06C5 | SM2F04NSU | BRCS200P03DP



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