All MOSFET. FQP44N10 Datasheet

 

FQP44N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP44N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 146 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 43.5 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm

Package: TO220

FQP44N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP44N10 Datasheet (PDF)

1.1. fqp44n10.pdf Size:607K _fairchild_semi

FQP44N10
FQP44N10

December 2000 TM QFET QFET QFET QFET FQP44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 43.5A, 100V, RDS(on) = 0.039? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 48 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology is especially tail

Datasheet: FCPF11N60 , FQP3N30 , FQP3N60C , FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , SPA11N60C3 , FQB11N40C , FQP45N15V2 , FQP46N15 , FQP47P06 , FQP4N80 , IRFU220B , FQP4N90C , FQP4P40 .

 


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