FQP44N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQP44N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 146 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 43.5 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 48 nC
Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm
Package: TO220
FQP44N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQP44N10 Datasheet (PDF)
1.1. fqp44n10.pdf 
Size:607K _fairchild_semi
December 2000 TM QFET QFET QFET QFET FQP44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is especially tail
1.2. fqp44n10f.pdf Size:591K _fairchild_semi
December 2000 TM QFET QFET QFET QFET FQP44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 43.5A, 100V, RDS(on) = 0.039Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 48 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology is es
4.1. fqp44n08.pdf Size:669K _fairchild_semi
August 2000 TM QFET QFET QFET QFET FQP44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 44A, 80V, RDS(on) = 0.034Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar stripe, DMOS technology. • Low Crss ( typical 90 pF) This advanced technology has been es
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
