All MOSFET. FQP44N10 Datasheet

 

FQP44N10 Datasheet and Replacement


   Type Designator: FQP44N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 146 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 43.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO220
 

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FQP44N10 Datasheet (PDF)

 ..1. Size:607K  fairchild semi
 fqp44n10.pdf pdf_icon

FQP44N10

December 2000TMQFETQFETQFETQFETFQP44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is es

 0.1. Size:591K  fairchild semi
 fqp44n10f.pdf pdf_icon

FQP44N10

December 2000TMQFETQFETQFETQFETFQP44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is es

 8.1. Size:669K  fairchild semi
 fqp44n08.pdf pdf_icon

FQP44N10

August 2000TMQFETQFETQFETQFETFQP44N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 44A, 80V, RDS(on) = 0.034 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been es

Datasheet: FCPF11N60 , FQP3N30 , FQP3N60C , FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , 7N60 , FQB11N40C , FQP45N15V2 , FQP46N15 , FQP47P06 , FQP4N80 , IRFU220B , FQP4N90C , FQP4P40 .

History: FXN0607CN | H5N2507P | TK11P65W

Keywords - FQP44N10 MOSFET datasheet

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