All MOSFET. P0908AK Datasheet

 

P0908AK MOSFET. Datasheet pdf. Equivalent


   Type Designator: P0908AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40.4 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 322 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN5X6P

 P0908AK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P0908AK Datasheet (PDF)

 ..1. Size:243K  niko-sem
 p0908ak.pdf

P0908AK P0908AK

N-Channel Enhancement Mode P0908AKNIKO-SEM Field Effect Transistor PDFN 5x6PHalogen-Free & Lead-FreeDD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G80V 9m 50A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 80 VGate-Source Voltage VGS

 8.1. Size:798K  unikc
 p0908ad.pdf

P0908AK P0908AK

P0908ADN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V80V 69ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C69IDContinuous Drain Current3TC= 100 C44AIDM160Pulsed Drain Current1,2IASAvalanche Cu

 8.2. Size:810K  unikc
 p0908atf.pdf

P0908AK P0908AK

P0908ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V80V 43ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C43IDContinuous Drain Current2TC = 100 C27AIDM160Pulsed Drain Current1,2IASAvalanche Current 38

 8.3. Size:568K  unikc
 p0908at.pdf

P0908AK P0908AK

P0908ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V80V 64ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 20TC = 25 C64IDContinuous Drain CurrentTC = 100 C41AIDM160Pulsed Drain Current1

 8.4. Size:179K  niko-sem
 p0908ad.pdf

P0908AK P0908AK

N-Channel Logic Level Enhancement P0908ADNIKO-SEM TO-252Mode Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 9m 80V 69A G 2.DRAIN 3.SOURCESABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS 20 VTC = 25 C 69 Continuous Drain Current

 8.5. Size:172K  niko-sem
 p0908atf.pdf

P0908AK P0908AK

N-Channel Enhancement Mode P0908ATFNIKO-SEM Field Effect Transistor TO-220FHalogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 9m 80V 43A G 2.DRAIN 3.SOURCESABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS 20 VTC = 25 C 43 Continuous Drain Current2 ID T

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BUK9M53-60E

 

 
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