All MOSFET. P1050ETF Datasheet

 

P1050ETF Datasheet and Replacement


   Type Designator: P1050ETF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.705 Ohm
   Package: TO-220F
 

 P1050ETF substitution

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P1050ETF Datasheet (PDF)

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P1050ETF

P1050ETF N-Channel Enhancement Mode NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G500V 705m 10A 2. DRAIN 3. SOURCE S100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 500 V Gate-Source Voltag

Datasheet: P0765JD , P0770ED , P0770JD , P0770JF , P0865ETF , P0903YK , P0908AK , P1010AT , IRFP450 , P1060ETFNA , P1065ETF , P1120EF , P1160JD , P1160JF , P1165JD , P1165JFN , P1306ED .

History: 25N10G-TF3-T

Keywords - P1050ETF MOSFET datasheet

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