P1050ETF Datasheet. Specs and Replacement

Type Designator: P1050ETF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.705 Ohm

Package: TO-220F

P1050ETF substitution

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P1050ETF datasheet

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P1050ETF

P1050ETF N-Channel Enhancement Mode NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 500V 705m 10A 2. DRAIN 3. SOURCE S 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 500 V Gate-Source Voltag... See More ⇒

Detailed specifications: P0765JD, P0770ED, P0770JD, P0770JF, P0865ETF, P0903YK, P0908AK, P1010AT, IRFP450, P1060ETFNA, P1065ETF, P1120EF, P1160JD, P1160JF, P1165JD, P1165JFN, P1306ED

Keywords - P1050ETF MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.