P1120EF Datasheet and Replacement
Type Designator: P1120EF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 57 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO-220F
P1120EF substitution
P1120EF Datasheet (PDF)
p1120ef.pdf
P1120EF N-Channel Enhancement Mode NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D200V 280m 11A G1: GATE 2: DRAIN S3: SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS 20 V TC
Datasheet: P0770JF , P0865ETF , P0903YK , P0908AK , P1010AT , P1050ETF , P1060ETFNA , P1065ETF , BS170 , P1160JD , P1160JF , P1165JD , P1165JFN , P1306ED , P1306EK , P1350ETF , P1406BV .
History: 25N10G-TF3-T
Keywords - P1120EF MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 25N10G-TF3-T
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