P1120EF Datasheet. Specs and Replacement

Type Designator: P1120EF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO-220F

P1120EF substitution

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P1120EF datasheet

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P1120EF

P1120EF N-Channel Enhancement Mode NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 200V 280m 11A G 1 GATE 2 DRAIN S 3 SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS 20 V TC ... See More ⇒

Detailed specifications: P0770JF, P0865ETF, P0903YK, P0908AK, P1010AT, P1050ETF, P1060ETFNA, P1065ETF, BS170, P1160JD, P1160JF, P1165JD, P1165JFN, P1306ED, P1306EK, P1350ETF, P1406BV

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