All MOSFET. P1160JD Datasheet

 

P1160JD Datasheet and Replacement


   Type Designator: P1160JD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 76 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.418 Ohm
   Package: TO-252
 

 P1160JD substitution

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P1160JD Datasheet (PDF)

 ..1. Size:305K  niko-sem
 p1160jd.pdf pdf_icon

P1160JD

N-Channel Enhancement Mode P1160JD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 600V 418m 11A 1. GATE 2. DRAIN G 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC

 8.1. Size:315K  niko-sem
 p1160jf.pdf pdf_icon

P1160JD

N-Channel Enhancement Mode P1160JF NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 400m 11A DG1. GATE S 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC

Datasheet: P0865ETF , P0903YK , P0908AK , P1010AT , P1050ETF , P1060ETFNA , P1065ETF , P1120EF , 4N60 , P1160JF , P1165JD , P1165JFN , P1306ED , P1306EK , P1350ETF , P1406BV , P1410BD .

History: BLP03N08-B | BLM055N04-D | BLP039N08-B | AONS660A70F | BLP05N15-B | BLP03N10-P | APT4016BN

Keywords - P1160JD MOSFET datasheet

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