P1160JD Datasheet. Specs and Replacement

Type Designator: P1160JD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 76 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.418 Ohm

Package: TO-252

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P1160JD datasheet

 ..1. Size:305K  niko-sem
 p1160jd.pdf pdf_icon

P1160JD

N-Channel Enhancement Mode P1160JD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 600V 418m 11A 1. GATE 2. DRAIN G 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC ... See More ⇒

 8.1. Size:315K  niko-sem
 p1160jf.pdf pdf_icon

P1160JD

N-Channel Enhancement Mode P1160JF NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 400m 11A D G 1. GATE S 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC... See More ⇒

Detailed specifications: P0865ETF, P0903YK, P0908AK, P1010AT, P1050ETF, P1060ETFNA, P1065ETF, P1120EF, 4N60, P1160JF, P1165JD, P1165JFN, P1306ED, P1306EK, P1350ETF, P1406BV, P1410BD

Keywords - P1160JD MOSFET specs

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