All MOSFET. P1406BV Datasheet

 

P1406BV MOSFET. Datasheet pdf. Equivalent


   Type Designator: P1406BV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 239 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: SOP-8

 P1406BV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P1406BV Datasheet (PDF)

 ..1. Size:206K  niko-sem
 p1406bv.pdf

P1406BV P1406BV

P1406BV N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G60V 12.5m 12A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TA = 2

 9.1. Size:328K  cystek
 mtp1406j3.pdf

P1406BV P1406BV

Spec. No. : C733J3 Issued Date : 2011.05.25 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTP1406J3 ID -10A90.8m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTP1406J3TO-252AB TO-252AA G D S G D S G

 9.2. Size:238K  cystek
 mtp1406m3.pdf

P1406BV P1406BV

Spec. No. : C733M3 Issued Date : 2011.05.16 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/5 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -60VMTP1406M3 ID -4A90.8m RDSON(MAX) Features Single Drive Requirement Low On-resistance, RDS(ON)=90.8m@VGS=-10V, ID=-4A Ultra High Speed Switching Pb-free lead plated package Symbol

 9.3. Size:560K  cystek
 mtp1406l3.pdf

P1406BV P1406BV

Spec. No. : C733L3 Issued Date : 2012.02.14 CYStech Electronics Corp. Revised Date : 2014.07.25 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTP1406L3 ID -4.8A 75m (typ.) RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A 74m (typ.) 99m (typ.) RDSON@VGS=-4.5V, ID=-2A Features Simple Drive Requirement Low On-resistance Fast

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RQ3E100GN

 

 
Back to Top