All MOSFET. P1410BD Datasheet

 

P1410BD MOSFET. Datasheet pdf. Equivalent


   Type Designator: P1410BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 49 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 269 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: TO-252

 P1410BD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P1410BD Datasheet (PDF)

 ..1. Size:219K  niko-sem
 p1410bd.pdf

P1410BD P1410BD

N-Channel Enhancement Mode P1410BD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 14.5m 49A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 8.1. Size:226K  niko-sem
 p1410bk.pdf

P1410BD P1410BD

N-Channel Enhancement Mode P1410BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 14.5m 42A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Vo

 9.1. Size:396K  niko-sem
 pp1410aea.pdf

P1410BD P1410BD

PP1410AEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D100V 14m 42A D D D DG. GATE D. DRAIN GS. SOURCE 100% UIS Tested #1 S S S GS100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou

 9.2. Size:371K  niko-sem
 pp1410ak.pdf

P1410BD P1410BD

N-Channel Enhancement Mode PP1410AK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D D D D D100V 14m 49A MSL (Moisture Sensitivity Level) 1. GG. GATE D. DRAIN #1 S S S GS. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou

 9.3. Size:325K  niko-sem
 pp1410af.pdf

P1410BD P1410BD

N-Channel Enhancement Mode PP1410AF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 14m 34A 1. GATE 2. DRAIN S3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 9.4. Size:311K  niko-sem
 pp1410ad.pdf

P1410BD P1410BD

N-Channel Enhancement Mode PP1410AD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G1.GATE 100V 14m 45A 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = 25

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: GP1M006A065XX

 

 
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