Справочник MOSFET. P1410BD

 

P1410BD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P1410BD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 49 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 55 nC
   trⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 269 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0145 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для P1410BD

 

 

P1410BD Datasheet (PDF)

 ..1. Size:219K  niko-sem
 p1410bd.pdf

P1410BD P1410BD

N-Channel Enhancement Mode P1410BD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 14.5m 49A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 8.1. Size:226K  niko-sem
 p1410bk.pdf

P1410BD P1410BD

N-Channel Enhancement Mode P1410BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 14.5m 42A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Vo

 9.1. Size:396K  niko-sem
 pp1410aea.pdf

P1410BD P1410BD

PP1410AEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D100V 14m 42A D D D DG. GATE D. DRAIN GS. SOURCE 100% UIS Tested #1 S S S GS100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou

 9.2. Size:371K  niko-sem
 pp1410ak.pdf

P1410BD P1410BD

N-Channel Enhancement Mode PP1410AK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D D D D D100V 14m 49A MSL (Moisture Sensitivity Level) 1. GG. GATE D. DRAIN #1 S S S GS. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou

 9.3. Size:325K  niko-sem
 pp1410af.pdf

P1410BD P1410BD

N-Channel Enhancement Mode PP1410AF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 14m 34A 1. GATE 2. DRAIN S3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 9.4. Size:311K  niko-sem
 pp1410ad.pdf

P1410BD P1410BD

N-Channel Enhancement Mode PP1410AD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G1.GATE 100V 14m 45A 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = 25

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