All MOSFET. P3506ET Datasheet

 

P3506ET Datasheet and Replacement


   Type Designator: P3506ET
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 152 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-220
 

 P3506ET substitution

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P3506ET Datasheet (PDF)

 ..1. Size:199K  niko-sem
p3506et.pdf pdf_icon

P3506ET

P-Channel Enhancement Mode P3506ET NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -36A 1. GATE G 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC =

 0.1. Size:200K  niko-sem
p3506etf.pdf pdf_icon

P3506ET

P-Channel Enhancement Mode P3506ETF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -20A 1. GATE G2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC

 8.1. Size:290K  niko-sem
p3506ed.pdf pdf_icon

P3506ET

P-Channel Enhancement Mode P3506ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -27A G 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC = 2

 8.2. Size:385K  niko-sem
p3506ek.pdf pdf_icon

P3506ET

P-Channel Logic Level Enhancement Mode P3506EK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D-60V 35m -27A GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. D D D D Optimized Gate Charge to Minimize Switching

Datasheet: P2206BV , P2206HK , P2610BI , P2610BK , P2610BTF , P2A06BT , P3506ED , P3506EK , IRF9640 , P3506ETF , P3606BEA , P3606BK , P3606NEA , P3710BK , P3710BT , P3710BTF , P3710HK .

History: HM1P10MR | DMP4025LSD | P0903BT | VBL1310 | FDJ128NF077 | IRF6612 | HUFA75339S3S

Keywords - P3506ET MOSFET datasheet

 P3506ET cross reference
 P3506ET equivalent finder
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