P5506HVA Datasheet. Specs and Replacement

Type Designator: P5506HVA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOP-8

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P5506HVA datasheet

 ..1. Size:259K  niko-sem
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P5506HVA

P5506HVA Dual N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 55m 4A G GATE D DRAIN S SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TA = 25 C... See More ⇒

 7.1. Size:387K  unikc
p5506hvg.pdf pdf_icon

P5506HVA

P5506HVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 55m @VGS = 10V 4.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TA = 25 C 4.5 ID Continuous Drain Current TA = 70 C 4 A IDM 25 Pulsed Drain Current1... See More ⇒

 7.2. Size:914K  cn vbsemi
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P5506HVA

P5506HVG www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel... See More ⇒

 9.1. Size:493K  unikc
p5506bvg.pdf pdf_icon

P5506HVA

P5506BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55m @VGS =10V 60V 5.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 Tc = 25 C 5.5 ID Continuous Drain Current1 Tc = 70 A C 4.5 IDM Pulsed Drain Current 2... See More ⇒

Detailed specifications: P3606NEA, P3710BK, P3710BT, P3710BTF, P3710HK, P5015CD, P5506BDA, P5506BVA, IRF840, P5506NK, P5506NV, P5510ED, P5510EK, P5515BD, P5515BK, P5515BV, P7510ED

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