P5515BV
MOSFET. Datasheet pdf. Equivalent
Type Designator: P5515BV
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 3.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 40
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 176
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
SOP-8
P5515BV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P5515BV
Datasheet (PDF)
..1. Size:208K niko-sem
p5515bv.pdf 
N-Channel Enhancement Mode P5515BVNIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G150V 55m 3.4A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 150 VGate-Source Voltage VGS 20 VTA = 25 C
8.1. Size:192K niko-sem
p5515bd.pdf
N-Channel Enhancement Mode P5515BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G150V 55m 24.6A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC
8.2. Size:219K niko-sem
p5515bk.pdf
P5515BKN-Channel Enhancement Mode NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-FreeDD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G150V 55m 13.4A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 150 VGate-Source Voltag
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