All MOSFET. FQP4N90C Datasheet

 

FQP4N90C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP4N90C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 17 nC

Maximum Drain-Source On-State Resistance (Rds): 4.2 Ohm

Package: TO220

FQP4N90C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQP4N90C Datasheet (PDF)

1.1. fqp4n90c fqpf4n90c.pdf Size:899K _fairchild_semi

FQP4N90C
FQP4N90C

TM QFET FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 17nC) planar stripe, DMOS technology. Low Crss ( typical 5.6 pF) This advanced technology has been especially tailored to Fast switch

3.1. fqp4n90.pdf Size:632K _fairchild_semi

FQP4N90C
FQP4N90C

October 2001 TM QFET FQP4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been especially t

 5.1. fqp4n80.pdf Size:650K _fairchild_semi

FQP4N90C
FQP4N90C

September 2000 TM QFET FQP4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially tailored to Fas

5.2. fqp4n25.pdf Size:710K _fairchild_semi

FQP4N90C
FQP4N90C

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology has been e

 5.3. fqp4n60.pdf Size:527K _fairchild_semi

FQP4N90C
FQP4N90C

April 2000 TM QFET QFET QFET QFET FQP4N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced technology has been es

5.4. fqp4n20l.pdf Size:902K _fairchild_semi

FQP4N90C
FQP4N90C

October 2013 FQP4N20L N-Channel QFET® MOSFET 200 V, 3.8 A, 1.35 Ω Description Features These N-Channel enhancement mode power field effect • 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 4.0 nC) technology is especially tailored

 5.5. fqp4n50.pdf Size:728K _fairchild_semi

FQP4N90C
FQP4N90C

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.4A, 500V, RDS(on) = 2.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been

5.6. fqp4n20.pdf Size:677K _fairchild_semi

FQP4N90C
FQP4N90C

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been

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