FQP4N90C - описание и поиск аналогов

TM QFET FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17nC) planar stripe, DMOS technology. Low Crss ( typical 5.6 pF) This advanced technology has been especially tailored to

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2001 TM QFET FQP4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.2A, 900V, RDS(on) = 3.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typically 24 nC) planar stripe, DMOS technology. Low Crss ( typically 9.5 pF) This advanced technology has been especially t

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been

October 2013 FQP4N20L N-Channel QFET MOSFET 200 V, 3.8 A, 1.35 Description Features These N-Channel enhancement mode power field effect 3.8 A, 200 V, RDS(on) = 1.35 (Max.) @ VGS = 10 V, ID = 1.9 A transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) technology is especially tailored

April 2000 TM QFET QFET QFET QFET FQP4N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.4A, 600V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has been es

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.4A, 500V, RDS(on) = 2.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been

September 2000 TM QFET FQP4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially tailo

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been e

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FQP4N20 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) 200 TrenchFET Power MOSFET RDS(on) ( )VGS = 10 V 0.85 175 C Junction Temperature Qg (Max.) (nC) 13 PWM Optimized 100 % Rg Tested Qgs (nC) 3.0 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 7.9 Configuration Single APPLICATIONS Primary Side Switch TO-220AB D G G