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FQP4N90C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQP4N90C

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 140 W

Предельно допустимое напряжение сток-исток (Uds): 900 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 5 V

Максимально допустимый постоянный ток стока (Id): 4 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 17 nC

Сопротивление сток-исток открытого транзистора (Rds): 4.2 Ohm

Тип корпуса: TO220

Аналог (замена) для FQP4N90C

 

 

FQP4N90C Datasheet (PDF)

1.1. fqp4n90c fqpf4n90c.pdf Size:899K _fairchild_semi

FQP4N90C
FQP4N90C

TM QFET FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 17nC) planar stripe, DMOS technology. Low Crss ( typical 5.6 pF) This advanced technology has been especially tailored to Fast switch

3.1. fqp4n90.pdf Size:632K _fairchild_semi

FQP4N90C
FQP4N90C

October 2001 TM QFET FQP4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been especially t

 5.1. fqp4n50.pdf Size:728K _fairchild_semi

FQP4N90C
FQP4N90C

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.4A, 500V, RDS(on) = 2.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been

5.2. fqp4n80.pdf Size:650K _fairchild_semi

FQP4N90C
FQP4N90C

September 2000 TM QFET FQP4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially tailored to Fas

 5.3. fqp4n20.pdf Size:677K _fairchild_semi

FQP4N90C
FQP4N90C

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been

5.4. fqp4n60.pdf Size:527K _fairchild_semi

FQP4N90C
FQP4N90C

April 2000 TM QFET QFET QFET QFET FQP4N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced technology has been es

 5.5. fqp4n20l.pdf Size:902K _fairchild_semi

FQP4N90C
FQP4N90C

October 2013 FQP4N20L N-Channel QFET® MOSFET 200 V, 3.8 A, 1.35 Ω Description Features These N-Channel enhancement mode power field effect • 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 4.0 nC) technology is especially tailored

5.6. fqp4n25.pdf Size:710K _fairchild_semi

FQP4N90C
FQP4N90C

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology has been e

Другие MOSFET... FQP3P50 , FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 , FQP47P06 , FQP4N80 , IRFU220B , IRF9540N , FQP4P40 , FQP50N06L , FQP55N10 , FQP6N60C , FQP5N60C , FQPF5N50C , FQP65N06 , FQP6N40C .

 

 
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