All MOSFET. PA110BEA Datasheet

 

PA110BEA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PA110BEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: PDFN3X3P

 PA110BEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PA110BEA Datasheet (PDF)

 ..1. Size:342K  niko-sem
 pa110bea.pdf

PA110BEA PA110BEA

PA110BEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 100V 105m 8.5A D D D DG. GATE G D. DRAIN S. SOURCE #1 S S S G100% UIS Tested S 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source

 8.1. Size:771K  unikc
 pa110bc.pdf

PA110BEA PA110BEA

PA110BCN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID110m @VGS = 10V100V 4ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C4IDContinuous Drain CurrentTA = 100 C3.5AIDM15Pulsed Drain Current1IASAvalanche Current 4.8E

 8.2. Size:465K  unikc
 pa110bv.pdf

PA110BEA PA110BEA

PA110BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID110m @VGS = 10V100V 3.2ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTA = 25 C3.2IDContinuous Drain CurrentTA = 70 C2.5AIDM10Pulsed Drain Curr

 8.3. Size:411K  unikc
 pa110bd.pdf

PA110BEA PA110BEA

PA110BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID110m @VGS = 10V100V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C15IDContinuous Drain CurrentTC = 100 C10AIDM60Pulsed Drain Curren

 8.4. Size:739K  unikc
 pa110bda.pdf

PA110BEA PA110BEA

PA110BDAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID105m @VGS = 10V100V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTC = 25 C15IDContinuous Drain CurrentTC = 100 C9.2AIDM20Pulsed Drain Cur

 8.5. Size:445K  unikc
 pa110bl.pdf

PA110BEA PA110BEA

PA110BLN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID110m @VGS = 10V100V 3A SOT- 223ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C6IDContinuous Drain Current TA = 25 C3.2ATA = 100 C2IDM15Pulsed Drain Current1IASAval

 8.6. Size:224K  niko-sem
 pa110bc.pdf

PA110BEA PA110BEA

PA110BCN-Channel Enhancement Mode NIKO-SEM SOT-89 Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 110m 4A 1 2 31. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 100 VGate-Source Voltage VGS 20 VTA =

 8.7. Size:391K  niko-sem
 pa110bda.pdf

PA110BEA PA110BEA

PA110BDA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 105m 15A G1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC

 8.8. Size:240K  niko-sem
 pa110bl.pdf

PA110BEA PA110BEA

PA110BL N-Channel Enhancement Mode NIKO-SEM SOT-223 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 110m 3A 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 6 TA = 25 C 3.2 A

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top