PA910BC Specs and Replacement
Type Designator: PA910BC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 29 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: SOT-89
PA910BC substitution
PA910BC datasheet
pa910bc.pdf
N-Channel Enhancement Mode PA910BC NIKO-SEM SOT-89 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1 2 3 100V 190m 2.9A 1 GATE 2 DRAIN 3 SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TA = 25 C 2.9 Continuous Drain Cur... See More ⇒
pa910bd.pdf
N-Channel Enhancement Mode PA910BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 190m 8.1A 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 8.1 Continuous Drain Cu... See More ⇒
pa910bm.pdf
N-Channel Enhancement Mode PA910BM NIKO-SEM SOT-23 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G GATE G 100V 190m 1.6A D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TA = 25 C 1.6 Continuous Drain Current ID... See More ⇒
Detailed specifications: PA567JA , PA597BA , PA5D8EA , PA5D8JA , PA5S6EA , PA5S6JA , PA607UA , PA710ED , AO3401 , PA910BM , PB502CW , PB5A2BX , PB5A3JW , PB5B5BX , PB5C5JW , PB5G8JW , PB600BX .
Keywords - PA910BC MOSFET specs
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PA910BC replacement
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