PD5B3BA Specs and Replacement
Type Designator: PD5B3BA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 73 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 507 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-252
PD5B3BA substitution
PD5B3BA datasheet
pd5b3ba.pdf
P-Channel Enhancement Mode PD5B3BA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 8m -73A D G Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications ... See More ⇒
Detailed specifications: PB6C4JU , PB6D2BX , PB6W8BX , PC015BDA , PC015HVA , PC561BA , PD515BA , PD551BA , STP80NF70 , PD5B9BA , PD5C1BA , PD5C9BA , PD5E8BA , PD5G3EA , PD5P8BA , PD600BA , PD601CX .
History: PD5G3EA
Keywords - PD5B3BA MOSFET specs
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