PE5M6EA Specs and Replacement

Type Designator: PE5M6EA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 51 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 89 nS

Cossⓘ - Output Capacitance: 294 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: PDFN3X3P

PE5M6EA substitution

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PE5M6EA datasheet

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PE5M6EA

N-Channel Enhancement Mode PE5M6EA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 24V 5m 51A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Integra... See More ⇒

Detailed specifications: PE597BA, PE5B1DZ, PE5B5DX, PE5B7BA, PE5C6JZ, PE5E6BA, PE5F7EA, PE5G5EA, IRLB3034, PE5Q8JZ, PE5V6BA, PE609CA, PE674DT, PE6A4BA, PE6A6BA, PE6D2DX, PE6R8DX

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