PE5M6EA Datasheet and Replacement
Type Designator: PE5M6EA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 51 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 89 nS
Cossⓘ - Output Capacitance: 294 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: PDFN3X3P
PE5M6EA substitution
PE5M6EA Datasheet (PDF)
pe5m6ea.pdf

N-Channel Enhancement Mode PE5M6EA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 24V 5m 51A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Integra
Datasheet: PE597BA , PE5B1DZ , PE5B5DX , PE5B7BA , PE5C6JZ , PE5E6BA , PE5F7EA , PE5G5EA , EMB04N03H , PE5Q8JZ , PE5V6BA , PE609CA , PE674DT , PE6A4BA , PE6A6BA , PE6D2DX , PE6R8DX .
History: HTD1K5N10 | AM4404N | FDS7088N7 | IXFR15N100Q3 | NCEP080N85 | HTI2K4P15T | AFN3404
Keywords - PE5M6EA MOSFET datasheet
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History: HTD1K5N10 | AM4404N | FDS7088N7 | IXFR15N100Q3 | NCEP080N85 | HTI2K4P15T | AFN3404



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