All MOSFET. PE6A4BA Datasheet

 

PE6A4BA Datasheet and Replacement


   Type Designator: PE6A4BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 111 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: PDFN3X3P
 

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PE6A4BA Datasheet (PDF)

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PE6A4BA

PE6A4BAN-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID D40V 12m 32A GFeatures S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D DG. GA

Datasheet: PE5E6BA , PE5F7EA , PE5G5EA , PE5M6EA , PE5Q8JZ , PE5V6BA , PE609CA , PE674DT , 2SK3918 , PE6A6BA , PE6D2DX , PE6R8DX , PE6W2EA , PE6W8DX , PE848DU , PE854DT , PE898BA .

History: VBZM75N03

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