PE6A6BA Datasheet and Replacement
Type Designator: PE6A6BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 215 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: PDFN3X3P
PE6A6BA substitution
PE6A6BA Datasheet (PDF)
pe6a6ba.pdf
PE6A6BA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D40V 7m 46A GFeatures S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D DG.
Datasheet: PE5F7EA , PE5G5EA , PE5M6EA , PE5Q8JZ , PE5V6BA , PE609CA , PE674DT , PE6A4BA , AON7403 , PE6D2DX , PE6R8DX , PE6W2EA , PE6W8DX , PE848DU , PE854DT , PE898BA , PE8A8BA .
History: FQP16N25C
Keywords - PE6A6BA MOSFET datasheet
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History: FQP16N25C
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