PE6D2DX Datasheet and Replacement
Type Designator: PE6D2DX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 63 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: PDFN3X3P
PE6D2DX substitution
PE6D2DX Datasheet (PDF)
pe6d2dx.pdf
Dual N-Channel Enhancement Mode PE6D2DX NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 25m 18A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D1 D1 D2 D2App
Datasheet: PE5G5EA , PE5M6EA , PE5Q8JZ , PE5V6BA , PE609CA , PE674DT , PE6A4BA , PE6A6BA , MMIS60R580P , PE6R8DX , PE6W2EA , PE6W8DX , PE848DU , PE854DT , PE898BA , PE8A8BA , PE8B0BA .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: DH100P35 | DH035N04
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