PE6D2DX Specs and Replacement
Type Designator: PE6D2DX
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 63 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: PDFN3X3P
PE6D2DX substitution
- MOSFET ⓘ Cross-Reference Search
PE6D2DX datasheet
pe6d2dx.pdf
Dual N-Channel Enhancement Mode PE6D2DX NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 25m 18A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D1 D1 D2 D2 App... See More ⇒
Detailed specifications: PE5G5EA, PE5M6EA, PE5Q8JZ, PE5V6BA, PE609CA, PE674DT, PE6A4BA, PE6A6BA, MMIS60R580P, PE6R8DX, PE6W2EA, PE6W8DX, PE848DU, PE854DT, PE898BA, PE8A8BA, PE8B0BA
Keywords - PE6D2DX MOSFET specs
PE6D2DX cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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