PE8A8BA Specs and Replacement
Type Designator: PE8A8BA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 1096 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: PDFN3X3P
PE8A8BA substitution
- MOSFET ⓘ Cross-Reference Search
PE8A8BA datasheet
pe8a8ba.pdf
PE8A8BA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 30V 3.7m 75A G Features S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D D G. ... See More ⇒
Detailed specifications: PE6A6BA, PE6D2DX, PE6R8DX, PE6W2EA, PE6W8DX, PE848DU, PE854DT, PE898BA, IRFZ44N, PE8B0BA, PE8C2BA, PE8D8BA, PECH1EU, PECJ1EU, PEE28BB, PEE50BB, PF515BM
Keywords - PE8A8BA MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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