All MOSFET. PE8B0BA Datasheet

 

PE8B0BA Datasheet and Replacement


   Type Designator: PE8B0BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 304 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN3X3P
 

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PE8B0BA Datasheet (PDF)

 ..1. Size:416K  niko-sem
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PE8B0BA

PE8B0BA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 8m 39A GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D D

Datasheet: PE6D2DX , PE6R8DX , PE6W2EA , PE6W8DX , PE848DU , PE854DT , PE898BA , PE8A8BA , IRF3205 , PE8C2BA , PE8D8BA , PECH1EU , PECJ1EU , PEE28BB , PEE50BB , PF515BM , PF5B3BA .

History: IXTP08N50D2 | IRFP251 | PE848DU | BLP12N10G-P | HAF1001

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