PE8B0BA Specs and Replacement

Type Designator: PE8B0BA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 304 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: PDFN3X3P

PE8B0BA substitution

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PE8B0BA datasheet

 ..1. Size:416K  niko-sem
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PE8B0BA

PE8B0BA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 30V 8m 39A G Features Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D D ... See More ⇒

Detailed specifications: PE6D2DX, PE6R8DX, PE6W2EA, PE6W8DX, PE848DU, PE854DT, PE898BA, PE8A8BA, IRF3205, PE8C2BA, PE8D8BA, PECH1EU, PECJ1EU, PEE28BB, PEE50BB, PF515BM, PF5B3BA

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs