All MOSFET. PE8D8BA Datasheet

 

PE8D8BA Datasheet and Replacement


   Type Designator: PE8D8BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 263 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: PDFN3X3P
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PE8D8BA Datasheet (PDF)

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PE8D8BA

PE8D8BA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 4.8m 52A GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D D

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History: IRFBG20 | TK2P60D | DMN2300UFB4 | DMN60H3D5SK3 | RTF020P02TL | DMP2104LP

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