PE8D8BA Datasheet and Replacement
Type Designator: PE8D8BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 263 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: PDFN3X3P
PE8D8BA substitution
PE8D8BA Datasheet (PDF)
pe8d8ba.pdf
PE8D8BA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 4.8m 52A GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D D
Datasheet: PE6W2EA , PE6W8DX , PE848DU , PE854DT , PE898BA , PE8A8BA , PE8B0BA , PE8C2BA , IRF840 , PECH1EU , PECJ1EU , PEE28BB , PEE50BB , PF515BM , PF5B3BA , PF5G3EA , PF608BA .
History: PECH1EU | BL4N65-A | BL4N60A-U
Keywords - PE8D8BA MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: PECH1EU | BL4N65-A | BL4N60A-U
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