All MOSFET. PE8D8BA Datasheet

 

PE8D8BA Datasheet and Replacement


   Type Designator: PE8D8BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 263 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: PDFN3X3P
 

 PE8D8BA substitution

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PE8D8BA Datasheet (PDF)

 ..1. Size:408K  niko-sem
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PE8D8BA

PE8D8BA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 4.8m 52A GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D D

Datasheet: PE6W2EA , PE6W8DX , PE848DU , PE854DT , PE898BA , PE8A8BA , PE8B0BA , PE8C2BA , IRF840 , PECH1EU , PECJ1EU , PEE28BB , PEE50BB , PF515BM , PF5B3BA , PF5G3EA , PF608BA .

History: RSY200N05TL | IRFS9231 | 2SK1404 | NX3008NBKW | PM5Q2EA | PKCD0BB | HGP080N10SL

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