All MOSFET. PECH1EU Datasheet

 

PECH1EU MOSFET. Datasheet pdf. Equivalent


   Type Designator: PECH1EU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 511 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
   Package: PDFN3.3X3.3S

 PECH1EU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PECH1EU Datasheet (PDF)

 ..1. Size:405K  niko-sem
 pech1eu.pdf

PECH1EU PECH1EU

P-Channel Logic Level Enhancement Mode PECH1EU NIKO-SEM Field Effect Transistor PDFN 3.3x3.3S Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 6.1m -50A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDD6637

 

 
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