PECH1EU Specs and Replacement

Type Designator: PECH1EU

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 511 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm

Package: PDFN3.3X3.3S

PECH1EU substitution

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PECH1EU datasheet

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PECH1EU

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Detailed specifications: PE6W8DX, PE848DU, PE854DT, PE898BA, PE8A8BA, PE8B0BA, PE8C2BA, PE8D8BA, 20N60, PECJ1EU, PEE28BB, PEE50BB, PF515BM, PF5B3BA, PF5G3EA, PF608BA, PG1010BD

Keywords - PECH1EU MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.