All MOSFET. PECH1EU Datasheet

 

PECH1EU Datasheet and Replacement


   Type Designator: PECH1EU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 511 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
   Package: PDFN3.3X3.3S
 

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PECH1EU Datasheet (PDF)

 ..1. Size:405K  niko-sem
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PECH1EU

P-Channel Logic Level Enhancement Mode PECH1EU NIKO-SEM Field Effect Transistor PDFN 3.3x3.3S Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 6.1m -50A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

Datasheet: PE6W8DX , PE848DU , PE854DT , PE898BA , PE8A8BA , PE8B0BA , PE8C2BA , PE8D8BA , 20N60 , PECJ1EU , PEE28BB , PEE50BB , PF515BM , PF5B3BA , PF5G3EA , PF608BA , PG1010BD .

History: BL4N60A-U | BL4N65-A

Keywords - PECH1EU MOSFET datasheet

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