PEE28BB Specs and Replacement
Type Designator: PEE28BB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 124 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 1117 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: PDFN3X3P
PEE28BB substitution
- MOSFET ⓘ Cross-Reference Search
PEE28BB datasheet
pee28bb.pdf
PEE28BB N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 30V 1.8m 124A G Features S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D D ... See More ⇒
Detailed specifications: PE854DT, PE898BA, PE8A8BA, PE8B0BA, PE8C2BA, PE8D8BA, PECH1EU, PECJ1EU, IRF540, PEE50BB, PF515BM, PF5B3BA, PF5G3EA, PF608BA, PG1010BD, PG1010BK, PG2910BD
Keywords - PEE28BB MOSFET specs
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