PF515BM Specs and Replacement

Type Designator: PF515BM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: SOT-23

PF515BM substitution

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PF515BM datasheet

 ..1. Size:253K  niko-sem
 pf515bm.pdf pdf_icon

PF515BM

N-Channel Enhancement Mode PF515BM NIKO-SEM SOT-23 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G GATE G 150V 650m 0.8A D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TA = 25 C 0.8 Continuous Drain Curre... See More ⇒

Detailed specifications: PE8A8BA, PE8B0BA, PE8C2BA, PE8D8BA, PECH1EU, PECJ1EU, PEE28BB, PEE50BB, IRFP460, PF5B3BA, PF5G3EA, PF608BA, PG1010BD, PG1010BK, PG2910BD, PG2910BEA, PG2910BK

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.