PF5G3EA Specs and Replacement

Type Designator: PF5G3EA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 77 nS

Cossⓘ - Output Capacitance: 812 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-220F

PF5G3EA substitution

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PF5G3EA datasheet

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PF5G3EA

P-Channel Enhancement PF5G3EA NIKO-SEM TO-220F Mode Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 8m -56A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Integrat... See More ⇒

Detailed specifications: PE8C2BA, PE8D8BA, PECH1EU, PECJ1EU, PEE28BB, PEE50BB, PF515BM, PF5B3BA, IRF640, PF608BA, PG1010BD, PG1010BK, PG2910BD, PG2910BEA, PG2910BK, PG3510HEA, PG8E10AF

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