All MOSFET. PF5G3EA Datasheet

 

PF5G3EA Datasheet and Replacement


   Type Designator: PF5G3EA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 812 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-220F
 

 PF5G3EA substitution

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PF5G3EA Datasheet (PDF)

 ..1. Size:269K  niko-sem
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PF5G3EA

P-Channel Enhancement PF5G3EA NIKO-SEM TO-220F Mode Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 8m -56A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Integrat

Datasheet: PE8C2BA , PE8D8BA , PECH1EU , PECJ1EU , PEE28BB , PEE50BB , PF515BM , PF5B3BA , IRF640 , PF608BA , PG1010BD , PG1010BK , PG2910BD , PG2910BEA , PG2910BK , PG3510HEA , PG8E10AF .

History: IRF610SPBF | 2N7000G | NCE0110K | FS7KM-12A | UT4430 | BL4N80-A | DH100P30CD

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