All MOSFET. PF5G3EA Datasheet

 

PF5G3EA Datasheet and Replacement


   Type Designator: PF5G3EA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 56 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 812 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-220F
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PF5G3EA Datasheet (PDF)

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PF5G3EA

P-Channel Enhancement PF5G3EA NIKO-SEM TO-220F Mode Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 8m -56A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Integrat

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History: IRFBG20 | TK2P60D | DMN2300UFB4 | DMN60H3D5SK3 | RTF020P02TL | DMP2104LP

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