All MOSFET. PF608BA Datasheet

 

PF608BA Datasheet and Replacement


   Type Designator: PF608BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-220F
 

 PF608BA substitution

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PF608BA Datasheet (PDF)

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PF608BA

N-Channel Enhancement Mode PF608BANIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 6m 58A DGFeatures S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications

Datasheet: PE8D8BA , PECH1EU , PECJ1EU , PEE28BB , PEE50BB , PF515BM , PF5B3BA , PF5G3EA , IRF1404 , PG1010BD , PG1010BK , PG2910BD , PG2910BEA , PG2910BK , PG3510HEA , PG8E10AF , PG8E10AK .

History: SI2312CDS | STD35NF3LLT4 | IXTT140N10P | SSF2341E | UPA1819GR | WFF18N50 | 2SK2071-01L

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