PF608BA Specs and Replacement
Type Designator: PF608BA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 410 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO-220F
PF608BA substitution
- MOSFET ⓘ Cross-Reference Search
PF608BA datasheet
pf608ba.pdf
N-Channel Enhancement Mode PF608BA NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 6m 58A D G Features S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications ... See More ⇒
Detailed specifications: PE8D8BA, PECH1EU, PECJ1EU, PEE28BB, PEE50BB, PF515BM, PF5B3BA, PF5G3EA, IRF1404, PG1010BD, PG1010BK, PG2910BD, PG2910BEA, PG2910BK, PG3510HEA, PG8E10AF, PG8E10AK
Keywords - PF608BA MOSFET specs
PF608BA cross reference
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PF608BA substitution
PF608BA replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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