All MOSFET. PG1010BD Datasheet

 

PG1010BD Datasheet and Replacement


   Type Designator: PG1010BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 194 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-252
 

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PG1010BD Datasheet (PDF)

 ..1. Size:238K  niko-sem
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PG1010BD

N-Channel Enhancement Mode PG1010BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 10.5m 64A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 7.1. Size:299K  niko-sem
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PG1010BD

N-Channel Enhancement Mode PG1010BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 10m 58A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Vol

Datasheet: PECH1EU , PECJ1EU , PEE28BB , PEE50BB , PF515BM , PF5B3BA , PF5G3EA , PF608BA , IRFP260N , PG1010BK , PG2910BD , PG2910BEA , PG2910BK , PG3510HEA , PG8E10AF , PG8E10AK , PI504BZ .

History: DHF85N08 | BRCS070P03YM | 2SK4202-S19-AY | RTR020N05TL | PM5Q2EA | PKCD0BB | MTN2N60FP

Keywords - PG1010BD MOSFET datasheet

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