PG1010BD Specs and Replacement

Type Designator: PG1010BD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 194 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO-252

PG1010BD substitution

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PG1010BD datasheet

 ..1. Size:238K  niko-sem
 pg1010bd.pdf pdf_icon

PG1010BD

N-Channel Enhancement Mode PG1010BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 100V 10.5m 64A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =... See More ⇒

 7.1. Size:299K  niko-sem
 pg1010bk.pdf pdf_icon

PG1010BD

N-Channel Enhancement Mode PG1010BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 10m 58A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Vol... See More ⇒

Detailed specifications: PECH1EU, PECJ1EU, PEE28BB, PEE50BB, PF515BM, PF5B3BA, PF5G3EA, PF608BA, IRLZ44N, PG1010BK, PG2910BD, PG2910BEA, PG2910BK, PG3510HEA, PG8E10AF, PG8E10AK, PI504BZ

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.