PG1010BD Datasheet and Replacement
Type Designator: PG1010BD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 64 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 194 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: TO-252
PG1010BD substitution
PG1010BD Datasheet (PDF)
pg1010bd.pdf
N-Channel Enhancement Mode PG1010BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 10.5m 64A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =
pg1010bk.pdf
N-Channel Enhancement Mode PG1010BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 10m 58A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Vol
Datasheet: PECH1EU , PECJ1EU , PEE28BB , PEE50BB , PF515BM , PF5B3BA , PF5G3EA , PF608BA , IRLZ44N , PG1010BK , PG2910BD , PG2910BEA , PG2910BK , PG3510HEA , PG8E10AF , PG8E10AK , PI504BZ .
History: IRF610SPBF | 2N7000G | NCE0110K | FS7KM-12A | UT4430 | BL4N80-A | DH100P30CD
Keywords - PG1010BD MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRF610SPBF | 2N7000G | NCE0110K | FS7KM-12A | UT4430 | BL4N80-A | DH100P30CD
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