PG2910BD Specs and Replacement
Type Designator: PG2910BD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 77 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0298 Ohm
Package: TO-252
PG2910BD substitution
- MOSFET ⓘ Cross-Reference Search
PG2910BD datasheet
pg2910bd.pdf
N-Channel Enhancement Mode PG2910BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 100V 29.8m 27A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =... See More ⇒
pg2910bea.pdf
PG2910BEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 29m 17.5A D D D D D G. GATE D. DRAIN G S. SOURCE 100% UIS Tested S 100% Rg Tested #1 S S S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou... See More ⇒
pg2910bk.pdf
N-Channel Enhancement Mode PG2910BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 29.8m 27A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source V... See More ⇒
Detailed specifications: PEE28BB, PEE50BB, PF515BM, PF5B3BA, PF5G3EA, PF608BA, PG1010BD, PG1010BK, IRF640N, PG2910BEA, PG2910BK, PG3510HEA, PG8E10AF, PG8E10AK, PI504BZ, PI517BZ, PI5B3BA
Keywords - PG2910BD MOSFET specs
PG2910BD cross reference
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