PG2910BD - параметры транзистора MOSFET, его аналоги, datasheet

PG2910BD Datasheet (PDF)

..1. Size:319K niko-sem
pg2910bd.pdf pdf_icon

N-Channel Enhancement Mode PG2910BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 29.8m 27A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

7.1. Size:403K niko-sem
pg2910bea.pdf pdf_icon

PG2910BEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 29m 17.5A DD D D DG. GATE D. DRAIN GS. SOURCE 100% UIS Tested S100% Rg Tested #1 S S S GABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou

7.2. Size:375K niko-sem
pg2910bk.pdf pdf_icon

N-Channel Enhancement Mode PG2910BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 29.8m 27A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source V

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