All MOSFET. PI517BZ Datasheet

 

PI517BZ Datasheet and Replacement


   Type Designator: PI517BZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 376 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-251
 

 PI517BZ substitution

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PI517BZ Datasheet (PDF)

 ..1. Size:222K  niko-sem
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PI517BZ

P-Channel Enhancement Mode PI517BZ NIKO-SEM TO-251(IS) Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 12m -55A 1. GATE G2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V TC

Datasheet: PG1010BK , PG2910BD , PG2910BEA , PG2910BK , PG3510HEA , PG8E10AF , PG8E10AK , PI504BZ , IRFB4115 , PI5B3BA , PJ527BA , PJ601CA , PJ611CA , PJ616CA-T , PK555BA , PK5A7BA , PK5B3BA .

History: PG8E10AK

Keywords - PI517BZ MOSFET datasheet

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