PI5B3BA Datasheet and Replacement
Type Designator: PI5B3BA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 74 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 507 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-251
PI5B3BA substitution
PI5B3BA Datasheet (PDF)
pi5b3ba.pdf
P-Channel Enhancement Mode PI5B3BANIKO-SEM TO-251Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 8m -74A DGFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. 1. GATE 2. DR
Datasheet: PG2910BD , PG2910BEA , PG2910BK , PG3510HEA , PG8E10AF , PG8E10AK , PI504BZ , PI517BZ , 2N7000 , PJ527BA , PJ601CA , PJ611CA , PJ616CA-T , PK555BA , PK5A7BA , PK5B3BA , PK5B9BA .
History: PG8E10AK
Keywords - PI5B3BA MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: PG8E10AK
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