PI5B3BA Specs and Replacement
Type Designator: PI5B3BA
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 74 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 507 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-251
PI5B3BA substitution
- MOSFET ⓘ Cross-Reference Search
PI5B3BA datasheet
pi5b3ba.pdf
P-Channel Enhancement Mode PI5B3BA NIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 8m -74A D G Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. 1. GATE 2. DR... See More ⇒
Detailed specifications: PG2910BD, PG2910BEA, PG2910BK, PG3510HEA, PG8E10AF, PG8E10AK, PI504BZ, PI517BZ, 2N7000, PJ527BA, PJ601CA, PJ611CA, PJ616CA-T, PK555BA, PK5A7BA, PK5B3BA, PK5B9BA
Keywords - PI5B3BA MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: MTA90N03ZN3 | APT5010JVFR
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