All MOSFET. PI5B3BA Datasheet

 

PI5B3BA Datasheet and Replacement


   Type Designator: PI5B3BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 74 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 507 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-251
 

 PI5B3BA substitution

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PI5B3BA Datasheet (PDF)

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PI5B3BA

P-Channel Enhancement Mode PI5B3BANIKO-SEM TO-251Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 8m -74A DGFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. 1. GATE 2. DR

Datasheet: PG2910BD , PG2910BEA , PG2910BK , PG3510HEA , PG8E10AF , PG8E10AK , PI504BZ , PI517BZ , IRFP250N , PJ527BA , PJ601CA , PJ611CA , PJ616CA-T , PK555BA , PK5A7BA , PK5B3BA , PK5B9BA .

History: PG8E10AF | PG8E10AK | IRFP250N | IXTP76N075T

Keywords - PI5B3BA MOSFET datasheet

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