PJ527BA Specs and Replacement
Type Designator: PJ527BA
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: J-LEAD
PJ527BA substitution
- MOSFET ⓘ Cross-Reference Search
PJ527BA datasheet
pj527ba.pdf
PJ527BA P-Channel Enhancement Mode Field NIKO-SEM J-Lead Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 14m -8A D G Features Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications ... See More ⇒
Detailed specifications: PG2910BEA, PG2910BK, PG3510HEA, PG8E10AF, PG8E10AK, PI504BZ, PI517BZ, PI5B3BA, P55NF06, PJ601CA, PJ611CA, PJ616CA-T, PK555BA, PK5A7BA, PK5B3BA, PK5B9BA, PK5C1BA
Keywords - PJ527BA MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FQN1N60CTA | IRFP21N60L
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