All MOSFET. PJ527BA Datasheet

 

PJ527BA Datasheet and Replacement


   Type Designator: PJ527BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: J-LEAD
 

 PJ527BA substitution

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PJ527BA Datasheet (PDF)

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PJ527BA

PJ527BA P-Channel Enhancement Mode Field NIKO-SEM J-Lead Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 14m -8A DGFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications

Datasheet: PG2910BEA , PG2910BK , PG3510HEA , PG8E10AF , PG8E10AK , PI504BZ , PI517BZ , PI5B3BA , IRFB4115 , PJ601CA , PJ611CA , PJ616CA-T , PK555BA , PK5A7BA , PK5B3BA , PK5B9BA , PK5C1BA .

History: RSY200N05TL | IRFS9231 | 2SK1404 | NX3008NBKW | PM5Q2EA | PKCD0BB | HGP080N10SL

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