PJ527BA Datasheet and Replacement
Type Designator: PJ527BA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: J-LEAD
PJ527BA substitution
PJ527BA Datasheet (PDF)
pj527ba.pdf

PJ527BA P-Channel Enhancement Mode Field NIKO-SEM J-Lead Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 14m -8A DGFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applications
Datasheet: PG2910BEA , PG2910BK , PG3510HEA , PG8E10AF , PG8E10AK , PI504BZ , PI517BZ , PI5B3BA , IRFB4115 , PJ601CA , PJ611CA , PJ616CA-T , PK555BA , PK5A7BA , PK5B3BA , PK5B9BA , PK5C1BA .
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