PJ616CA-T Datasheet and Replacement
Type Designator: PJ616CA-T
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: J-LEAD
PJ616CA-T substitution
PJ616CA-T Datasheet (PDF)
pj616ca-t.pdf

PJ616CA-T N- & P-Channel Enhancement Mode NIKO-SEM J-Lead Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 30V 12.5m 8.9A P-Channel -30V 27.5m -6.1A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to M
Datasheet: PG8E10AF , PG8E10AK , PI504BZ , PI517BZ , PI5B3BA , PJ527BA , PJ601CA , PJ611CA , AON7408 , PK555BA , PK5A7BA , PK5B3BA , PK5B9BA , PK5C1BA , PK5E4BA , PK5G3EA , PK5H3EN .
History: EV3401 | PKCD0BB | OSG65R125PF | DMP210DUDJ | PKCK2BB | RT3J55M | VBE1201K
Keywords - PJ616CA-T MOSFET datasheet
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History: EV3401 | PKCD0BB | OSG65R125PF | DMP210DUDJ | PKCK2BB | RT3J55M | VBE1201K



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