PJ616CA-T Specs and Replacement
Type Designator: PJ616CA-T
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: J-LEAD
PJ616CA-T substitution
- MOSFET ⓘ Cross-Reference Search
PJ616CA-T datasheet
pj616ca-t.pdf
PJ616CA-T N- & P-Channel Enhancement Mode NIKO-SEM J-Lead Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 30V 12.5m 8.9A P-Channel -30V 27.5m -6.1A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to M... See More ⇒
Detailed specifications: PG8E10AF, PG8E10AK, PI504BZ, PI517BZ, PI5B3BA, PJ527BA, PJ601CA, PJ611CA, IRFP250N, PK555BA, PK5A7BA, PK5B3BA, PK5B9BA, PK5C1BA, PK5E4BA, PK5G3EA, PK5H3EN
Keywords - PJ616CA-T MOSFET specs
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