All MOSFET. PK5E4BA Datasheet

 

PK5E4BA Datasheet and Replacement


   Type Designator: PK5E4BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: PDFN5X6P
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PK5E4BA Datasheet (PDF)

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PK5E4BA

PK5E4BAN-Channel Enhancement Mode NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-FreeDD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 9.5m 40A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 30 VGate-Source Voltage V

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History: DMN60H3D5SK3 | TK2P60D | RTF020P02TL | IRFBG20 | DMN2300UFB4 | DMP2104LP

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