PK6B0SA Datasheet and Replacement
Type Designator: PK6B0SA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 227 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: PDFN5X6P
PK6B0SA substitution
PK6B0SA Datasheet (PDF)
pk6b0sa.pdf
N-Channel Enhancement Mode PK6B0SANIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID D D D D30V 5m 56A G. GATE D. DRAIN S. SOURCE #1 S S S GABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 V
Datasheet: PK5V6BA , PK5V8EN , PK5X8BA , PK601CA , PK609CA , PK626HY , PK676BA , PK6A8BA , 12N60 , PK6M6DX , PK844DS , PK884DS , PK892DS , PK8A6EA , PK8B0BA , PK8C2BA , PK8D8BA .
History: IRFR120PBF | APT1004RBN
Keywords - PK6B0SA MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: IRFR120PBF | APT1004RBN
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