PK6M6DX Datasheet and Replacement
Type Designator: PK6M6DX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 231 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: PDFN5X6P
PK6M6DX substitution
PK6M6DX Datasheet (PDF)
pk6m6dx.pdf
Dual N-Channel Enhancement Mode PK6M6DX NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D1 D1 D2 D2V(BR)DSS RDS(ON) ID 40V 8.5m 45A G. GATE D. DRAIN S. SOURCE #1 S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source
Datasheet: PK5V8EN , PK5X8BA , PK601CA , PK609CA , PK626HY , PK676BA , PK6A8BA , PK6B0SA , 5N65 , PK844DS , PK884DS , PK892DS , PK8A6EA , PK8B0BA , PK8C2BA , PK8D8BA , PKC46DY .
History: IRFR120PBF | APT1004RBN
Keywords - PK6M6DX MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRFR120PBF | APT1004RBN
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