PK884DS Specs and Replacement

Type Designator: PK884DS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 259 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: PDFN5X6S

PK884DS substitution

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PK884DS datasheet

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PK884DS

Dual N-Channel Enhancement Mode PK884DS NIKO-SEM Field Effect Transistor PDFN 5x6S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 2m 85A 5m Q1 30V 53A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losse... See More ⇒

Detailed specifications: PK601CA, PK609CA, PK626HY, PK676BA, PK6A8BA, PK6B0SA, PK6M6DX, PK844DS, IRFB3607, PK892DS, PK8A6EA, PK8B0BA, PK8C2BA, PK8D8BA, PKC46DY, PKCD0BB, PKCE9BB

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.