All MOSFET. PK8B0BA Datasheet

 

PK8B0BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PK8B0BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.4 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 304 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: PDFN5X6P

 PK8B0BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PK8B0BA Datasheet (PDF)

 ..1. Size:414K  niko-sem
 pk8b0ba.pdf

PK8B0BA PK8B0BA

N-Channel Enhancement Mode PK8B0BA NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30 7.8m 47A GFeatures S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D D D D Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G. G

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRLL2703

 

 
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