PM5D8EA Specs and Replacement
Type Designator: PM5D8EA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 19 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT-23
PM5D8EA substitution
- MOSFET ⓘ Cross-Reference Search
PM5D8EA datasheet
pm5d8ea.pdf
N-Channel Enhancement Mode PM5D8EA NIKO-SEM Field Effect Transistor SOT-23(S) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 300m 1A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD Protection ... See More ⇒
Detailed specifications: PKE94BB, PKE96BB, PKEA6EB, PM515BA, PM555BZ, PM567EA, PM569BA, PM5C3BA, STF13NM60N, PM5H7EA, PM5Q2EA, PM5Q4BA, PM5T4EA, PM5W6EA, PP1410AD, PP1410AEA, PP1410AF
Keywords - PM5D8EA MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRF6706S2 | 3SK317
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