PM5D8EA Datasheet and Replacement
Type Designator: PM5D8EA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 19 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT-23
PM5D8EA substitution
PM5D8EA Datasheet (PDF)
pm5d8ea.pdf

N-Channel Enhancement Mode PM5D8EA NIKO-SEM Field Effect Transistor SOT-23(S) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 300m 1A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD Protection
Datasheet: PKE94BB , PKE96BB , PKEA6EB , PM515BA , PM555BZ , PM567EA , PM569BA , PM5C3BA , IRF2807 , PM5H7EA , PM5Q2EA , PM5Q4BA , PM5T4EA , PM5W6EA , PP1410AD , PP1410AEA , PP1410AF .
History: RJU002N06FRA
Keywords - PM5D8EA MOSFET datasheet
PM5D8EA cross reference
PM5D8EA equivalent finder
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History: RJU002N06FRA



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