PM5H7EA Specs and Replacement
Type Designator: PM5H7EA
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 64 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOT-23
PM5H7EA substitution
- MOSFET ⓘ Cross-Reference Search
PM5H7EA datasheet
pm5h7ea.pdf
PM5H7EA P-Channel Enhancement Mode NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 65m -3.4A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Inte... See More ⇒
Detailed specifications: PKE96BB, PKEA6EB, PM515BA, PM555BZ, PM567EA, PM569BA, PM5C3BA, PM5D8EA, IRFZ24N, PM5Q2EA, PM5Q4BA, PM5T4EA, PM5W6EA, PP1410AD, PP1410AEA, PP1410AF, PP1410AK
Keywords - PM5H7EA MOSFET specs
PM5H7EA cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: MTNK5C3 | IPD105N04LG | MTNK5N3
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