PM5Q2EA Specs and Replacement

Type Designator: PM5Q2EA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT-23

PM5Q2EA substitution

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PM5Q2EA datasheet

 ..1. Size:273K  niko-sem
 pm5q2ea.pdf pdf_icon

PM5Q2EA

PM5Q2EA N-Channel Enhancement Mode NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 45m 3.8A ESD Protected Gate Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ... See More ⇒

Detailed specifications: PKEA6EB, PM515BA, PM555BZ, PM567EA, PM569BA, PM5C3BA, PM5D8EA, PM5H7EA, 2N60, PM5Q4BA, PM5T4EA, PM5W6EA, PP1410AD, PP1410AEA, PP1410AF, PP1410AK, PP1515AD

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