All MOSFET. PP2G10AS Datasheet

 

PP2G10AS Datasheet and Replacement


   Type Designator: PP2G10AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 1285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO-263
 

 PP2G10AS substitution

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PP2G10AS Datasheet (PDF)

 ..1. Size:315K  niko-sem
 pp2g10as.pdf pdf_icon

PP2G10AS

N-Channel Enhancement Mode PP2G10AS NIKO-SEM Field Effect Transistor TO-263 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 2.7m 180A 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T

 7.1. Size:317K  niko-sem
 pp2g10at.pdf pdf_icon

PP2G10AS

N-Channel Enhancement Mode PP2G10AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D100V 2.98m 183A G1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T

Datasheet: PP1410AF , PP1410AK , PP1515AD , PP1515AF , PP1515AK , PP1C06AKB , PP2915AD , PP2915AK , 8N60 , PP2G10AT , PP2H06AK , PP2H06AT , PP2H06BK , PP4515BD , PP4515BK , PP4515BL , PP4B10AD .

History: TTG65N10A

Keywords - PP2G10AS MOSFET datasheet

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