PP2G10AS Specs and Replacement

Type Designator: PP2G10AS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 72 nS

Cossⓘ - Output Capacitance: 1285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: TO-263

PP2G10AS substitution

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PP2G10AS datasheet

 ..1. Size:315K  niko-sem
 pp2g10as.pdf pdf_icon

PP2G10AS

N-Channel Enhancement Mode PP2G10AS NIKO-SEM Field Effect Transistor TO-263 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 2.7m 180A 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T... See More ⇒

 7.1. Size:317K  niko-sem
 pp2g10at.pdf pdf_icon

PP2G10AS

N-Channel Enhancement Mode PP2G10AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 100V 2.98m 183A G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T... See More ⇒

Detailed specifications: PP1410AF, PP1410AK, PP1515AD, PP1515AF, PP1515AK, PP1C06AKB, PP2915AD, PP2915AK, IRFB7545, PP2G10AT, PP2H06AK, PP2H06AT, PP2H06BK, PP4515BD, PP4515BK, PP4515BL, PP4B10AD

Keywords - PP2G10AS MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.