All MOSFET. PP4B10AD Datasheet

 

PP4B10AD MOSFET. Datasheet pdf. Equivalent


   Type Designator: PP4B10AD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 123 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 771 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-252

 PP4B10AD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PP4B10AD Datasheet (PDF)

 ..1. Size:203K  niko-sem
 pp4b10ad.pdf

PP4B10AD PP4B10AD

N-Channel Logic Level Enhancement PP4B10AD NIKO-SEM Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 4.5m 100V 123A G 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 123 Continuous

 7.1. Size:366K  niko-sem
 pp4b10ak.pdf

PP4B10AD PP4B10AD

N-Channel Enhancement Mode PP4B10AK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID DD D D D100V 4.2m 127A MSL (Moisture Sensitivity Level) 1. GG. GATE D. DRAIN S S. SOURCE #1 S S S GABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-So

 7.2. Size:210K  niko-sem
 pp4b10af.pdf

PP4B10AD PP4B10AD

N-Channel Enhancement Mode PP4B10AF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D100V 4.4m 79A G1. GATE 2. DRAIN S 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 7.3. Size:235K  niko-sem
 pp4b10as.pdf

PP4B10AD PP4B10AD

N-Channel Enhancement Mode PP4B10AS NIKO-SEM Field Effect Transistor TO-263 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 4.4m 139A 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T

 7.4. Size:237K  niko-sem
 pp4b10at.pdf

PP4B10AD PP4B10AD

N-Channel Enhancement Mode PP4B10AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 4.5m 137A 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: BUK102-50GS

 

 
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