PP4B10AS Specs and Replacement

Type Designator: PP4B10AS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 139 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 762 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm

Package: TO-263

PP4B10AS substitution

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PP4B10AS datasheet

 ..1. Size:235K  niko-sem
 pp4b10as.pdf pdf_icon

PP4B10AS

N-Channel Enhancement Mode PP4B10AS NIKO-SEM Field Effect Transistor TO-263 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 4.4m 139A 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T... See More ⇒

 7.1. Size:366K  niko-sem
 pp4b10ak.pdf pdf_icon

PP4B10AS

N-Channel Enhancement Mode PP4B10AK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D D D D D 100V 4.2m 127A MSL (Moisture Sensitivity Level) 1. G G. GATE D. DRAIN S S. SOURCE #1 S S S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-So... See More ⇒

 7.2. Size:210K  niko-sem
 pp4b10af.pdf pdf_icon

PP4B10AS

N-Channel Enhancement Mode PP4B10AF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 100V 4.4m 79A G 1. GATE 2. DRAIN S 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = ... See More ⇒

 7.3. Size:237K  niko-sem
 pp4b10at.pdf pdf_icon

PP4B10AS

N-Channel Enhancement Mode PP4B10AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 4.5m 137A 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T... See More ⇒

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Detailed specifications: PP2H06AT, PP2H06BK, PP4515BD, PP4515BK, PP4515BL, PP4B10AD, PP4B10AF, PP4B10AK, IRF730, PP4B10AT, PP4B10BD, PP4B10BF, PP4B10BK, PP4B10BS, PP9C15AD, PP9C15AF, PP9C15AK

Keywords - PP4B10AS MOSFET specs

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