PP9H06BI Specs and Replacement

Type Designator: PP9H06BI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 565 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: TO-251

PP9H06BI substitution

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PP9H06BI datasheet

 ..1. Size:206K  niko-sem
 pp9h06bi.pdf pdf_icon

PP9H06BI

PP9H06BI N-Channel Enhancement Mode NIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 60V 9.8m 64A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 2... See More ⇒

 7.1. Size:298K  niko-sem
 pp9h06bk.pdf pdf_icon

PP9H06BI

N-Channel Enhancement Mode PP9H06BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 60V 9.1m 60A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Volt... See More ⇒

 7.2. Size:207K  niko-sem
 pp9h06bd.pdf pdf_icon

PP9H06BI

PP9H06BD N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 60V 9.8m 64A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 2... See More ⇒

 7.3. Size:370K  niko-sem
 pp9h06bea.pdf pdf_icon

PP9H06BI

N-Channel Enhancement Mode PP9H06BEA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY D D D D V(BR)DSS RDS(ON) ID G. GATE G 60V 9.8m 47A D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Volt... See More ⇒

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Detailed specifications: PP4B10BK, PP4B10BS, PP9C15AD, PP9C15AF, PP9C15AK, PP9C15AT, PP9H06BD, PP9H06BEA, IRF1404, PP9H06BK, PP9H06BV, PQ5G4JN, PQ5U2JN, PQ6S2JN, PQ6V2JN, PQ6X6JN, PR802BA33

Keywords - PP9H06BI MOSFET specs

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