PT676BA Datasheet and Replacement
Type Designator: PT676BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 166 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 702 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
Package: TO-220
PT676BA substitution
PT676BA Datasheet (PDF)
pt676ba.pdf

N-Channel Enhancement Mode PT676BA NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G40V 2.7m 166A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V TC = 25
Datasheet: PQ5G4JN , PQ5U2JN , PQ6S2JN , PQ6V2JN , PQ6X6JN , PR802BA33 , PR812BA33 , PT5B9BA , IRF9540 , PT6J6BA , PV521BA , PV555BA , PV561BA , PV563BA , PV5G3EA , PV609CA , PV616DA .
History: NCE65TF180F
Keywords - PT676BA MOSFET datasheet
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History: NCE65TF180F



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