All MOSFET. PT676BA Datasheet

 

PT676BA Datasheet and Replacement


   Type Designator: PT676BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 166 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 702 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO-220
 

 PT676BA substitution

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PT676BA Datasheet (PDF)

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PT676BA

N-Channel Enhancement Mode PT676BA NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G40V 2.7m 166A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V TC = 25

Datasheet: PQ5G4JN , PQ5U2JN , PQ6S2JN , PQ6V2JN , PQ6X6JN , PR802BA33 , PR812BA33 , PT5B9BA , 2N7000 , PT6J6BA , PV521BA , PV555BA , PV561BA , PV563BA , PV5G3EA , PV609CA , PV616DA .

History: FQD3N50CTM | P0908AK | MSU7N60T | P0865ETF | P1010AT | DH150N12 | AOK160A60

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