PT676BA Specs and Replacement

Type Designator: PT676BA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 166 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 702 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: TO-220

PT676BA substitution

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PT676BA datasheet

 ..1. Size:200K  niko-sem
 pt676ba.pdf pdf_icon

PT676BA

N-Channel Enhancement Mode PT676BA NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 40V 2.7m 166A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V TC = 25 ... See More ⇒

Detailed specifications: PQ5G4JN, PQ5U2JN, PQ6S2JN, PQ6V2JN, PQ6X6JN, PR802BA33, PR812BA33, PT5B9BA, 2N7000, PT6J6BA, PV521BA, PV555BA, PV561BA, PV563BA, PV5G3EA, PV609CA, PV616DA

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