PV555BA Specs and Replacement

Type Designator: PV555BA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.8 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP-8

PV555BA substitution

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PV555BA datasheet

 ..1. Size:263K  niko-sem
 pv555ba.pdf pdf_icon

PV555BA

P-Channel Logic Level Enhancement Mode PV555BA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 28m -6A -30V G G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20... See More ⇒

Detailed specifications: PQ6V2JN, PQ6X6JN, PR802BA33, PR812BA33, PT5B9BA, PT676BA, PT6J6BA, PV521BA, 7N65, PV561BA, PV563BA, PV5G3EA, PV609CA, PV616DA, PV6A4BA, PV6A6BA, PV6A8BA

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs