All MOSFET. PV555BA Datasheet

 

PV555BA Datasheet and Replacement


   Type Designator: PV555BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP-8
 

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PV555BA Datasheet (PDF)

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PV555BA

P-Channel Logic Level Enhancement Mode PV555BANIKO-SEM SOP-8Field Effect Transistor Halogen-free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 28m -6A -30V GG : GATE D : DRAIN S : SOURCESABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20

Datasheet: PQ6V2JN , PQ6X6JN , PR802BA33 , PR812BA33 , PT5B9BA , PT676BA , PT6J6BA , PV521BA , STP75NF75 , PV561BA , PV563BA , PV5G3EA , PV609CA , PV616DA , PV6A4BA , PV6A6BA , PV6A8BA .

History: IPD800N06NG

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