All MOSFET. PV609CA Datasheet

 

PV609CA Datasheet and Replacement


   Type Designator: PV609CA
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP-8
 

 PV609CA substitution

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PV609CA Datasheet (PDF)

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PV609CA

PV609CAN- & P-Channel Enhancement Mode NIKO-SEM SOP-8Field Effect TransistorHalogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 40V 25m 6A 60m -4.3A P-Channel -40V Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Swit

Datasheet: PT5B9BA , PT676BA , PT6J6BA , PV521BA , PV555BA , PV561BA , PV563BA , PV5G3EA , 2N7000 , PV616DA , PV6A4BA , PV6A6BA , PV6A8BA , PV6D2DA , PW567EA , PW5D8EA , PW5S6EA .

History: ME3483-G | MTP3055AFI | IPDD60R150G7 | SML25SCM650N2A | STF11N65M2-045Y | SI2301BDS-T1-GE3 | OSG55R290AF

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