PV609CA Datasheet and Replacement
Type Designator: PV609CA
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 126 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOP-8
PV609CA substitution
PV609CA Datasheet (PDF)
pv609ca.pdf
PV609CAN- & P-Channel Enhancement Mode NIKO-SEM SOP-8Field Effect TransistorHalogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 40V 25m 6A 60m -4.3A P-Channel -40V Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Swit
Datasheet: PT5B9BA , PT676BA , PT6J6BA , PV521BA , PV555BA , PV561BA , PV563BA , PV5G3EA , AON7408 , PV616DA , PV6A4BA , PV6A6BA , PV6A8BA , PV6D2DA , PW567EA , PW5D8EA , PW5S6EA .
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